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DMP3008SFG
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = -10V
Continuous Drain Current (Note 6) V GS = -4.5V
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
-8.6
-7.0
-11.7
-9.3
-7.1
-5.6
-9.6
-7.6
A
A
A
A
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
I DM
I S
-80
-3.0
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Total Power Dissipation (Note 5)
Characteristic
Symbol
P D
Value
0.9
Units
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
140
72
2.2
57
30
7.1
-55 to +150
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
100
100
R θ JA(t) (t) * R θ JA
T J A = P * R θ JA(t)
10
R DS(on)
Limited
P W = 10μ s
90
80
Single Pulse
R θ JA = 57 ° C/W
=r
-T
70
DC
60
1
0.1
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
P W = 1ms
P W = 100μs
T J(max) = 150°C
T A = 25°C
Single Pulse
50
40
30
20
10
0.01
0.1
1
10
100
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
2 of 7
www.diodes.com
May 2012
? Diodes Incorporated
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